Diodes DRTR5V0U1SO - Manual (Page 2)

DRTR5V0U1SO
Document number: DS35027 Rev. 3 - 2
2 of 4
www.diodes.com
July 2013
© Diodes Incorporated
DRTR5V0U1SO
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current I
PP
5 A 8/20µs, Per Figure 3
ESD Protection – Contact Discharge V
ESD_Contact
±8 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge V
ESD_Air
±15 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — 5.5 V —
Channel Leakage Current (Note 6, 7) I
R
— 1 100 nA

V
R
= 3V
Reverse breakdown voltage V
BR
6.0 — 9.0 V I
R
= 1mA, from pin 2 to pin 3
Forward Voltage V
F
— 0.8 — V I
F
= 8mA
Dynamic Resistance R DYN
— 0.9 — Ω I PP = 1A, t
p
= 8/20 μs
I/O to GND Capacitance C
(I/O-GND)
— 1.0 1.5 pF V
(I/O-GND)
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1 and pin 2 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
0 125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
25 100 50 75 150
200
Note 5
250
300
350
400
0
50
25 50 75 100 125 150
P
EAK
P
U
LS
E
D
E
R
A
T
IN
G
%
O
F
P
EAK
PO
W
E
R O
R
CUR
RENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200