Electrical characteristics, Mmbt2222a – Diodes MMBT2222A User Manual

Page 4

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MMBT2222A

Document number: DS30041 Rev. 14 - 2

4 of 7

www.diodes.com

January 2014

© Diodes Incorporated

MMBT2222A

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage

BV

CBO

75

V

I

C

= 100µA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

40

V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

6.0

V

I

E

= 100µA, I

C

= 0

Collector Cutoff Current

I

CBO

10

nA
µA

V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

A

= +150°C

Collector Cutoff Current

I

CEX

10

nA

V

CE

= 60V, V

EB(OFF)

= 3.0V

Collector Cutoff Current

I

CEV

10

nA

V

CE

= 60V, V

BE

= ±0.25V

Emitter Cutoff Current

I

EBO

10

nA

V

EB

= 5.0V, I

C

= 0

Base Cutoff Current

I

BL

20

nA

V

CE

= 60V, V

EB(OFF)

= 3.0V

ON CHARACTERISTICS (Note 10)

DC Current Gain

h

FE

35
50
75

100

40
50
35



300



I

C

= 100µA, V

CE

= 10V

I

C

= 1.0mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V

I

C

= 150mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V, T

A

= -55°C

I

C

= 150mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(sat)

0.3
1.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

Base-Emitter Saturation Voltage

V

BE(sat)

0.6

1.2
2.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

SMALL SIGNAL CHARACTERISTICS
Output Capacitance

C

obo

8

pF

V

CB

= 10V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo

25

pF

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

Current Gain-Bandwidth Product

f

T

300

MHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

Noise Figure

NF

4.0

dB

V

CE

= 10V, I

C

= 100µA,

R

S

= 1.0kΩ

,

f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

t

d

10

ns

V

CC

= 30V, I

C

= 150mA,

V

BE(OFF)

= - 0.5V, I

B1

= 15mA

Rise Time

t

r

25

ns

V

CC

= 3.0V, I

C

= 150mA, I

B1

= 15mA,

V

BE(OFF)

= 0.5V

Storage Time

t

s

225

ns

V

CC

= 30V, I

C

= 150mA,

I

B1

= I

B2

= 15mA

Fall Time

t

f

60

ns

V

CC

= 30V, I

C

= 150mA, I

B1

= I

B2

= 15mA

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.




















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