Electrical characteristics – Diodes MMST3904 User Manual
Page 2
DS30082 Rev. 11 - 2
2 of 4
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MMST3904
© Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
⎯
50
nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= 100
μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.25
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
⎯
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
10
k
Ω
Voltage Feedback Ratio
h
re
0.5
8.0
x 10
-4
Small Signal Current Gain
h
fe
100
400
⎯
Output Admittance
h
oe
1.0
40
μS
V
CE
= 10V, I
C
= 1.0
m
A,
f = 1.0MHz
Current Gain-Bandwith Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 10
m
A,
f = 100MHz
Noise Figure
NF
⎯
5.0
dB
V
CC
= 5.0V, I
C
= 100
μA,
R
S
= 1.0k
Ω, f = 1.0MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35
ns
Rise Time
t
r
⎯
35
ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(OFF)
= -0.5V, I
B1
= 1.0mA
Notes:
5. Short duration pulse test used to minimize self-heating effect.