Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25040DZ User Manual
Page 5
ZXTP25040DZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
-45
-75
V
I
C
= -100
μA
Collector-Emitter
breakdown voltage
(base open)
BV
CEO
-40
-65
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
-3
-8.7
V
I
E
= -100
μA
Emitter-Base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
μA
Collector cut-off current
I
CBO
<-1
-50
-0.5
nA
μA
V
CB
= -45V
V
CB
= -45V, T
amb
=100°C
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
-170
-70
-215
-265
-90
-350
mV
mV
mV
I
C
= -1A, I
B
= -20mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -3.5A, I
B
= -350mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
-970
-1050
mV
I
C
= -3.5A, I
B
= -350mA
(*)
Base-emitter turn-on
voltage
V
BE(on)
-870
-950
mV
I
C
= -3.5A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
300
200
20
450
300
50
900
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -3.5A, V
CE
= -2V
(*)
Transition frequency
f
T
270
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Input capacitance
C
ibo
142
pF
V
EB
= -0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
17.4
pF
V
CB
= -10V, f
= 1MHz
(*)
Turn-on time
t
(on)
75.5
ns
V
CC
= -15V, I
C
= -750mA,
I
B1
=
-I
B2
=
-15mA,
Turn-off time
t
(off)
320
ns