Silicon Power SMCT AA 32N14_N-MOS VCS, TO-247 User Manual

Advanced pulse power device, N-mos vcs, to-247, 5 lead to-247

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Description

Package

Size - 4

Schematic Symbol

Features

This voltage controlled Solidtron

TM

(VCS) discharge switch

utilizes an n-type MOS-Controlled Thyristor mounted in a five
leaded TO-247 plastic package.

The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.

The industry standard TO-247 package allows for integration of
the Solidtron using automated insertion equipment.

1400V Peak Off-State Voltage
32A Continuous Rating
4kA Surge Current Capability

<100nSec Turn-On Delay
Low On-State Voltage
MOS Gated Control

Anode (A)

Gate (G)

Gate Return (GR)

Advanced Pulse Power Device

N-MOS VCS, TO-247

Data Sheet (Rev 0 - 12/19/07)

SMCTAA32N14A10

5 Lead TO-247

1

275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700

Pin 1 : Gate
Pin 2 : Gate return
Pin 3 : Anode
Pin 4 : Cathode
Pin 5 : Cathode

Absolute Maximum Ratings

SYMBOL

VALUE

UNITS

Peak Off-State Voltage

V

DRM

1400

V

Peak Reverse Voltage

V

RRM

-5

V

Off-State Rate of Change of Voltage Immunity

dv/dt

5000

V/uSec

Continuous Anode Current at 110

o

C

I

A110

32

A

Repetitive Peak Anode Current (Pulse Width=1uSec)

I

ASM

4000

A

Rate of Change of Current

dI/dt

150

kA/uSec

Continuous Gate-Cathode Voltage

V

GKS

+/-20

V

Peak Gate-Cathode Voltage

V

GKM

+/-25

V

Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State

V

GK(OFF-MIN)

-5

V

Maximum Junction Temperature

T

JM

150

o

C

Maximum Soldering Temperature (Installation)

260

o

C

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890

5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635

5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773

5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957

4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206

5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671

4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668

5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174

4,644,637
4,374,389
4,750,666
4,429,011
5,293,070

4kA Surge Current Capability
>100kA/uSec dI/dt Capability

MOS Gated Control
Low Inductance Package

Cathode (K)

CAO 05/28/09

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