Silicon Power MCM SSCL 1500V 700A 4KVB_Power Semiconductor Half-Bridge Module - Manual (Page 2)

MCM - SSCL1500V700A4KVB
Power Semiconductor Half-Bridge Module
SGTOs
(TJ=25°C unless otherwise specified)
Performance Ratings Measurements
Parameters SymbolMin. Typ. Max. Units Test Conditions
V
DRM
4 kV 60 Hz, 3 pulse, TJ=140°C
dv/dt > 1 kV/us
I
D
50 100 uA V
GK
=0V, V
AK
=3.5kV, TJ=25°C
10 uA TJ=140oC, Note: 3 & 4
Peak Anode Current (8mSec)
P at 8ms
5 kA
dI/dt 60 kA/us
Turn-on Delay Time t
D(ON)
100 ns Ls=8.2nH
Turn-off Delay Time t
D(OFF)
TBD C=0.15 uF Capacitor discharge
V
T
1.1 I
T
=700A, TJ=25oC
1.2 V Ig = 500 mA, TJ=140oC
Operating Case Temp. Tc 100
o C
Thermal Resistance R
JC
0.042
o C/W
S Diodes
(TJ=25°C unless otherwise specified)
Peak Off-State Forward Voltage
Off-State rate of Change of
Voltage Immunity
Anode-Cathode Off-State
Forward Leakage Current
Pk Rate of Change of Current
(measured)
Anode-Cathode On-State
Voltage
S Diodes
(TJ=25°C unless otherwise specified)
Performance Ratings Measurements
Parameters SymbolMin. Typ. Max. Units Test Conditions
V
RRM
4 kV
dv/dt > 1 kV/us
RMS Forward Current
I
F(AVG)
700 A T
c
= 140
o
C
Forward Voltage V
F
1.1 I
F
= 700 A, T
J
= 25
o
C
1.2 V I
F
= 700 A, T
J
= 140 o C
T
J
, T
STG
125
o C
R
JC
0.042
o C/W
Repetitive Peak Reverse
Voltage
Off-State rate of Change of
Voltage Immunity
Operating Junction and Storage
Temperature
Thermal Resistance from
Junction to Case (Per Diode)
CAO 05-28-09