Cypress CY62148E User Manual

Mbit (512k x 8) static ram, Features, Functional description

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CY62148E MoBL

®

4-Mbit (512K x 8) Static RAM

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05442 Rev. *F

Revised March 28, 2007

Features

• Very high speed: 45 ns
• Voltage range: 4.5V–5.5V
• Pin compatible with CY62148B
• Ultra low standby power

— Typical standby current: 1 µA

— Maximum standby current: 7 µA (Industrial)

• Ultra low active power

Typical active current: 2.0 mA @ f = 1 MHz

• Easy memory expansion with CE, and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power

• Available in Pb-free 32-pin TSOP II and 32-pin SOIC

[2]

packages

Functional Description

[1]

The CY62148E is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL

®

) in

portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Placing the device into standby mode reduces power
consumption by more than 99% when deselected (CE HIGH).
The eight input and output pins (IO

0

through IO

7

) are placed

in a high impedance state when:

• Deselected (CE HIGH)

• Outputs are disabled (OE HIGH)

• Write operation is active (CE LOW and WE LOW)

To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight IO pins (IO

0

through IO

7

)

is then written into the location specified on the address pins
(A

0

through A

18

).

To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appear on the IO pins.

Product Portfolio

Product

Range

V

CC

Range (V)

Speed

(ns)

Power Dissipation

Operating I

CC

(mA)

Standby I

SB2

(

µA)

f = 1MHz

f = f

max

Min

Typ

[3]

Max

Typ

[3]

Max

Typ

[3]

Max

Typ

[3]

Max

CY62148ELL TSOP II

Ind’l

4.5

5.0

5.5

45

2

2.5

15

20

1

7

CY62148ELL SOIC

Ind’l/Auto-A

4.5

5.0

5.5

55

2

2.5

15

20

1

7

Notes

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at

http://www.cypress.com

.

2. SOIC package is available only in 55 ns speed bin.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

CC

= V

CC(typ)

, T

A

= 25°C.

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