Switching characteristics – Cypress CY62167DV18 User Manual

Page 5

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CY62167DV18 MoBL

®

Document #: 38-05326 Rev. *C

Page 5 of 11

Switching Characteristics

(Over the Operating Range)

[10]

Parameter

Description

55 ns

Unit

Min

Max

Read Cycle
t

RC

Read Cycle Time

55

ns

t

AA

Address to Data Valid

55

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE

1

LOW and CE

2

HIGH to Data Valid

55

ns

t

DOE

OE LOW to Data Valid

25

ns

t

LZOE

OE LOW to LOW Z

[11]

5

ns

t

HZOE

OE HIGH to High Z

[11, 12]

20

ns

t

LZCE

CE

1

LOW and CE

2

HIGH to Low Z

[11]

10

ns

t

HZCE

CE

1

HIGH and CE

2

LOW to High Z

[11, 12]

20

ns

t

PU

CE

1

LOW and CE

2

HIGH to Power up

0

ns

t

PD

CE

1

HIGH and CE

2

LOW to Power down

55

ns

t

DBE

BLE/BHE LOW to Data Valid

55

ns

t

LZBE

BLE/BHE LOW to Low Z

[11]

5

ns

t

HZBE

BLE/BHE HIGH to HIGH Z

[11, 12]

20

ns

Write Cycle

[13]

t

WC

Write Cycle Time

55

ns

t

SCE

CE

1

LOW and CE

2

HIGH

to Write End

40

ns

t

AW

Address Setup to Write End

40

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Setup to Write Start

0

ns

t

PWE

WE Pulse Width

40

ns

t

BW

BLE/BHE LOW to Write End

45

ns

t

SD

Data Setup to Write End

25

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High-

[11, 12]

20

ns

t

LZWE

WE HIGH to Low-Z

[11]

10

ns

Notes

10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of V

CC(typ)

/2, input pulse levels

of 0 to V

CC(typ)

, and output loading of the specified I

OL

/I

OH

as shown in

“AC Test Loads and Waveforms” on page 4

.

11. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZBE

is less than t

LZBE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any

given device.

12. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

transitions are measured when the outputs enter a high impedance state.

13. The internal write time of the memory is defined by the overlap of WE, CE

1

= V

IL

, BHE, BLE or both = V

IL

, and CE

2

= V

IH

. All signals must be ACTIVE to initiate

a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that

terminates the write.

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