Fdd6690a, Electrical characteristics – Fairchild PowerTrench MOSFET User Manual

Page 3

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FDD6690A Rev. EW)

D

R

P

DS(ON)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current

2.3

A

V

SD

Drain–Source Diode Forward Voltage

V

GS

= 0 V,

I

S

= 2.3 A

(Note 2)

0.76

1.2

V

t

rr

Diode Reverse Recovery Time

24

nS

Q

rr

Diode Reverse Recovery Charge

I

F

= 12 A, d

iF

/d

t

= 100 A/µs

13

nC

Notes:

1. R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θ

JC

is guaranteed by design while R

θ

CA

is determined by the user's board design.

a) R

θ

JA

= 45°C/W when mounted on a

1in

2

pad of 2 oz copper

b) R

θ

JA

= 96°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300

µ

s, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where P

D

is maximum power dissipation at T

C

= 25°C and R

DS(on)

is at T

J(max)

and V

GS

= 10V. Package current limitation is 21A

FDD6690A

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