Talw, Tads, Tadh – Mitel DISTRIBUTED HYPERCHANNEL MT90840 User Manual

Page 44: Talrd, Tddr, Tcsrw, Tcsr, Tdhr, Talwr, Tcsw

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MT90840

Preliminary Information

2-274

† Timing is over recommended temperature & power supply voltages.
‡ Typical figures are at 25

°

C and are for design aid only: not guaranteed and not subject to production testing.

* High Impedance is measured by pulling to the appropriate rail with R

L

, with timing corrected to cancel time taken to discharge C

L

.

** Individual writes to Connection Memories will have Register Acknowledgment Delay. Burst writes to Connection Memories will have Read
Connection Memory Acknowledgment Delay.

AC Electrical Characteristics

- Intel/National- HPC Multiplexed Bus Mode

Voltages are with respect to ground (V

SS

) unless otherwise stated.

Characteristics

Sym

Min

Typ

Max

Units

Test Conditions/

Notes

1

ALE pulse width

t

alw

10

ns

2

Address setup from ALE falling

t

ads

5

ns

3

Address hold from ALE falling

t

adh

5

ns

4

RD Active after ALE falling

t

alrd

15

ns

5

Data setup from DTA LOW on read

t

ddr

0

ns

C

L

=150 pF on DTA,

and 30 pF on AD0-7.

6

CS hold after RD/WR

t

csrw

0

ns

7

CS setup from RD

t

csr

0

ns

8

Data hold after RD

t

dhr

10
15

22
30

ns
ns

C

L

=30 pF

C

L

=150 pF

9

WR delay after ALE falling

t

alwr

15

ns

10 CS setup from WR

t

csw

0

ns

11 Data setup from WR

t

dsw

10

ns

12 Data hold after WR Inactive

t

dhw

0

ns

13 RD/WR Inactive to ALE Falling Edge

t

rst

23

ns

14 Acknowledgment hold time

t

akh

0

20

ns

C

L

=150 pF, R

L

=1k

Ω∗

15 Data Delay on Reading Registers

t

rdd

47
68

ns
ns

C

L

=30 pF

C

L

=150 pF

16 Acknowledgment Delay

Reading Registers

Acknowledgment Delay

Writing Registers

t

akd-rd

t

akd-wr

73
85

32
41

ns
ns

ns
ns

C

L

=30 pF

C

L

=150 pF

C

L

=30 pF

C

L

=150 pF

17 Acknowledgment Delay - Memories:

Reading TP Data Memory

Reading RP Data Memory

Reading TP Connection Memory

Reading RP Connection Memory

Writing TP Connection Memory**

Writing RP Connection Memory**

t

akd-mem

244

122

1 clock

cycle

244

t

akd-wr

t

akd-wr

488

366

2 clock

cycles

488

1306

1062

3 clk cyc +

t

akd-rd

817

3 clk cyc +

t

akd-wr

774

ns

ns

ns

ns

1 to 5 C4 cycles +
register t

akd-rd

.5 to 4 C4 cycles +
register t

akd-rd

1 to 3 PCKT/R cycles
+ register t

akd-rd

1 to 3 C4 cycles +
register t

akd-rd

Up to 3 PCKT/R cyc.
+ register t

akd-wr

Up to 3 C4 cycles +
register t

akd-wr

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