Philips BGD906 - Manual (Page 2)

2001 Nov 01 2
NXP Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
BGD906 BGD906MI
1 input output
2, 3 common common
5 +V
B
+V
B
7, 8 common common
9 output input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
7
8
9
2
3 5 1
Side view MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 21.2 21.8 dB
f = 900 MHz 22 23 dB
I
tot
total current consumption (DC) V
B
= 24 V; T
mb
= 35
°C
405 435 mA
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
supply voltage
−
30 V
V
i
RF input voltage
−
70 dBmV
T
stg
storage temperature
−40
+100
°C
T
mb
operating mounting base temperature
−20
+100
°C