NXP Semiconductors SiGeC BFU725F - Manual (Page 2)

www.nxp.com
©2006 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Date of release: October 2006
Document order number: 9397 750 15784
Printed in the Netherlands
Parameter Symbol Conditions Value
Collector-emitter breakdown
voltage BV
CEO
I
C
= 1 mA; I
B
= 0 3.2 V
Maximum collector current I
C(max)
40 mA
Transition frequency f
T
V
CE
= 2 V; I
C
= 25 mA; f = 2 GHz 68 GHz
Noise figure NF
V
CE
= 2 V; I
C
= 5 mA; f = 1.8 GHz; Γ
s
= Γ
opt
0.4 dB
V
CE
= 2 V; I
C
= 5 mA; f = 2.4 GHz; Γ
s
= Γ
opt
0.45 dB
V
CE
= 2 V; I
C
= 5 mA; f = 5.8 GHz; Γ
s
= Γ
opt
0.7 dB
V
CE
= 2 V; I
C
= 5 mA; f = 12 GHz; Γ
s
= Γ
opt
1.0 dB
Maximum stable power gain MSG / G
P(max)
V
CE
= 2 V; I
C
= 25 mA; f = 1.8 GHz 26.6 dB
V
CE
= 2 V; I
C
= 25 mA; f = 2.4 GHz 25.5 dB
V
CE
= 2 V; I
C
= 25 mA; f = 12 GHz 13 dB
V
CE
= 2 V; I
C
= 25 mA; f = 5.8 GHz 17 dB
Quick reference data
Transition frequency as a function of collector current (typical values) Gain as a function of frequency (typical values)