Renesas SuperH HS7710KCM02HE - Manual (Page 14)

8
CPU
3.3 V
4.7 k
Ω
E10A
TMS, TRST
Diode equivalent to
1SS106*
Note: Schottky-barrier diode
Figure 1.4 Countermeasure against the Leakage Current in the Emulator
The result above differs depending on the circuit and can only be used as a reference.
7. The resistance values shown in figure 1.5 are recommended.
8. For the pin processing in cases where the emulator is not used, refer to the hardware
manual of the related device.
9. For the AUDCK pin, guard the pattern between the H-UDI port connector and the
MPU at GND level.