Vishay semiconductors – C&H Technology VS-GB100TH120U User Manual
Page 6
VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 93413
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Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
I
F
(A)
V
F
(V)
0
3.0
1.0
2.0
0
50
25
150
100
200
75
175
125
T
J
= 125 °C
T
J
= 25 °C
2.5
0.5
1.5
I
F
(V)
E (mJ)
0
50
100
150
200
0
2
4
6
8
10
12
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
V
CC
= 600 V
E
rec
E (mJ)
R
g
(
Ω)
0
60
10
20
30
40
50
0
1
2
3
5
4
6
7
8
V
GE
= ± 15 V
T
J
=
125 °C
V
CC
= 600 V
I
F
= 100 A
E
rec
t (s)
Z
thJC
- Thermal Impedance (K/W)
10
0
10
-1
10
-2
10
-3
10
1
10
-0
10
-1
10
-2
10
-3
DIODE