Vishay semiconductors, Circuit configuration – C&H Technology VS-GB300LH120N User Manual
Page 6
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VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-13
5
Document Number: 94784
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E (mJ)
0
5
10
15
20
25
0
10
20
30
40
50
R
g
(Ω)
E
rec
V
GE
= - 15 V
T
J
= 125 °C
V
CC
= 600 V
I
C
= 300 A
t (s)
Z
thJC
(K/W)
10
0
10
-1
10
-2
10
-3
10
-0
10
-1
10
-1
10
-2
10
-3
Diode
1
6
7
3
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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