C&H Technology EMF050J60U - Manual (Page 6)

VS-EMF050J60U
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11 5 Document Number: 93494
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Energy losses include “tail” and diode reverse recovery.
Note
(1) Mounting surface flat, smooth, and greased
D1 - D2 CLAMPING DIODE
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 30 A
dl/dt = 500 A/μs
- 50 80 ns
Diode peak reverse current I
rr
- 7.5 11 A
Diode recovery charge Q
rr
- 185 440 nC
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 30 A
dl/dt = 500 A/μs, T
J
= 125 °C
- 107 147 ns
Diode peak reverse current I
rr
- 18 22 A
Diode recovery charge Q
rr
- 955 1620 nC
D3 - D4 AP DIODE
Diode reverse recovery time t
rr V
R
= 400 V
I
F
= 50 A
dl/dt = 500 A/μs
- 114 150 ns
Diode peak reverse current I
rr
- 21 25 A
Diode recovery charge Q
rr
- 1200 1875 nC
Diode reverse recovery time t
rr V
R
= 400 V
I
F
= 50 A
dl/dt = 500 A/μs, T
J
= 125 °C
- 170 210 ns
Diode peak reverse current I
rr
- 28 32 A
Diode recovery charge Q
rr
- 2160 3360 nC
D5 - D6 AP DIODE
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 30 A
dl/dt = 500 A/μs
- 46 77 ns
Diode peak reverse current I
rr
- 7 11 A
Diode recovery charge Q
rr
- 161 423 nC
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 30 A
dl/dt = 500 A/μs, T
J
= 125 °C
- 106 138 ns
Diode peak reverse current I
rr
- 17 22 A
Diode recovery charge Q
rr
- 900 1518 nC
THERMISTOR ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance
R
25
4500 5000 5500

R
100
T
J
= 100 °C 468 493 518
B value B T
J
= 25 °C/T
J
= 50 °C 3206 3375 3544 K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
R
thJC
- - 0.37
°C/W
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) - - 0.37
D1 - D2 Clamping diode - Junction to case thermal resistance (per diode) - - 0.83
D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.71
D5 - D6 AP diode - Junction to case thermal resistance (per diode) - - 1.3
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
R
thCS
(1)
- 0.31 -
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) - 0.31 -
D1 - D2 Clamping diode - Case to sink thermal resistance (per diode) - 0.51 -
D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.41 -
D5 - D6 AP diode - Case to sink thermal resistance (per diode) - 0.62 -
Mounting torque (M4) - 2 3 Nm
Weight - 39 - g
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS