Vishay semiconductors – C&H Technology EMF050J60U User Manual

Page 6

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VS-EMF050J60U

www.vishay.com

Vishay Semiconductors

Revision: 09-Dec-11

5

Document Number: 93494

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Note

(1)

Energy losses include “tail” and diode reverse recovery.

Note

(1)

Mounting surface flat, smooth, and greased

D1 - D2 CLAMPING DIODE

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 30 A

dl/dt = 500 A/μs

-

50

80

ns

Diode peak reverse current

I

rr

-

7.5

11

A

Diode recovery charge

Q

rr

-

185

440

nC

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 30 A

dl/dt = 500 A/μs, T

J

= 125 °C

-

107

147

ns

Diode peak reverse current

I

rr

-

18

22

A

Diode recovery charge

Q

rr

-

955

1620

nC

D3 - D4 AP DIODE

Diode reverse recovery time

t

rr

V

R

= 400 V

I

F

= 50 A

dl/dt = 500 A/μs

-

114

150

ns

Diode peak reverse current

I

rr

-

21

25

A

Diode recovery charge

Q

rr

-

1200

1875

nC

Diode reverse recovery time

t

rr

V

R

= 400 V

I

F

= 50 A

dl/dt = 500 A/μs, T

J

= 125 °C

-

170

210

ns

Diode peak reverse current

I

rr

-

28

32

A

Diode recovery charge

Q

rr

-

2160

3360

nC

D5 - D6 AP DIODE

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 30 A

dl/dt = 500 A/μs

-

46

77

ns

Diode peak reverse current

I

rr

-

7

11

A

Diode recovery charge

Q

rr

-

161

423

nC

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 30 A

dl/dt = 500 A/μs, T

J

= 125 °C

-

106

138

ns

Diode peak reverse current

I

rr

-

17

22

A

Diode recovery charge

Q

rr

-

900

1518

nC

THERMISTOR ELECTRICAL CHARACTERISTICS (T

J

= 25 °C unless otherwise noted)

PARAMETER SYMBOL

TEST

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Resistance

R

25

4500

5000

5500

R

100

T

J

= 100 °C

468

493

518

B value

B

T

J

= 25 °C/T

J

= 50 °C

3206

3375

3544

K

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

MIN.

TYP.

MAX.

UNITS

Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)

R

thJC

-

-

0.37

°C/W

Q2 - Q3 IGBT - Junction to case thermal resistance (per switch)

-

-

0.37

D1 - D2 Clamping diode - Junction to case thermal resistance (per diode)

-

-

0.83

D3 - D4 AP diode - Junction to case thermal resistance (per diode)

-

-

0.71

D5 - D6 AP diode - Junction to case thermal resistance (per diode)

-

-

1.3

Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)

R

thCS

(1)

-

0.31

-

Q2 - Q3 IGBT - Case to sink thermal resistance (per switch)

-

0.31

-

D1 - D2 Clamping diode - Case to sink thermal resistance (per diode)

-

0.51

-

D3 - D4 AP diode - Case to sink thermal resistance (per diode)

-

0.41

-

D5 - D6 AP diode - Case to sink thermal resistance (per diode)

-

0.62

-

Mounting torque (M4)

-

2

3

Nm

Weight

-

39

-

g

SWITCHING CHARACTERISTICS (T

J

= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

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