C&H Technology VS-GT75NP120N - Manual (Page 5)

VS-GT75NP120N
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Vishay Semiconductors
Revision: 01-Feb-13 4 Document Number: 94829
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter-Voltage
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Typical Switching Times vs. R
g
Fig. 9 - Typical Forward Characteristics (Diode)
0 100 300 200 400
0
4
6
2
8
12
10
14
16
V
CC
= 600 V
I
C
= 75 A
V
G
E
(V)
I
C
(mA)
10 1
10 2
10 0
10 -1
0 25 50 75 100
V
CE
(V)
C (nF)
C
oes
C
res
C
ies
10
2
10 3
10 1
t (ns)
I
C
(A)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 15 Ω
V
CC
= 600 V
0 20 60 40 80 100 120 140 160
10 2
10 4
10 3
10 1
0 10 20 30 40 50
R
g
( Ω)
t (ns)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 75 A
V
CC
= 600 V
t
d(off)
t
f
t
r
t
d(on)
150
125
100
75
50
25
0
1.5 2 0.5 0 1 2.5 3
25 °C
125 °C
V
F
(V)
I
F
(V)