Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB75TP120N User Manual
Page 4
VS-GB75TP120N
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Vishay Semiconductors
Revision: 17-Sep-12
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Document Number: 94712
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.23
K/W
Diode
-
-
1.32
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A)
25 °C
125 °C
V
GE
= 15 V
V
GE
(V)
I
C
(A)
0
25
50
75
100
125
150
6
7
8
9
10
11
12
13
125 °C
V
CE
= 20 V
25 °C
I
C
(A)
E (mJ)
0
5
10
15
20
25
30
0
25
50
75
100
125
150
E
on
E
off
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 10
Ω
V
CC
= 600 V
R
g
(
Ω)
E (mJ)
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 75 A
V
CC
= 600 V
E
on
E
off