Vs-ufb80fa40, Vishay semiconductors – C&H Technology VS-UFB80FA40 User Manual
Page 5
VS-UFB80FA40
www.vishay.com
Vishay Semiconductors
Revision: 21-Oct-11
4
Document Number: 93620
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
0
0
120
20
40
60
80
100
25
50
75
100
125
150
175
DC
Square Wave (D = 0.5)
Rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average
Power
Loss (W)
0
0
80
10
20
30
40
50
60
70
10
20
30
40
50
60
70
80
90
RMS Limit
D = 0.05
DC
D = 0.10
D = 0.20
D = 0.50
D = 0.33
50
60
70
80
90
100
110
120
130
140
150
t
rr
(ns)
dI
F
/dt (ns)
T
J
= 125 °C
T
J
= 25 °C
I
f
= 30 A
V
rr
= 100 V
100
1000
0
400
100
1000
800
1200
1600
2000
2400
Q
rr
(nC)
dI
F
/dt (A/μs)
T
J
= 125 °C
T
J
= 25 °C
I
f
= 30 A
V
rr
= 100 V