C&H Technology VS-GB300TH120U - Manual (Page 5)

VS-GB300TH120U
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Vishay Semiconductors
Revision: 17-Sep-12 4 Document Number: 94751
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I C
(A)
V
CE
(V)
0 300 900 600 1200 1500
0
400
500
600
700
200
100
300
R
g
= 3.3 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
IGBT
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
t (s)
Z
thJC
- Thermal Impedance (K/W)
V
F
(V)
I F
(A)
0
100
200
300
400
500
600
0 0.5 1 1.5 2 2.5 3
125 °C
25 °C
0
5
10
15
20
25
30
35
0 100 200 300 400 500 600
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 3.3 Ω
V
GE
= - 15 V
T
J
= 125 °C