Vishay semiconductors – C&H Technology VS-GB100NH120N User Manual
Page 5
Advertising
VS-GB100NH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
4
Document Number: 94755
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
0
300
900
600
1200
1500
200
220
180
160
140
120
100
80
60
40
20
0
I
C
(A)
V
CE
(V)
R
g
= 5.6
Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
0.001
0.01
0.1
0.001
0.01
0.1
1
10
t (s)
Z
thJC
(K/W)
IGBT
100
25
0
50
150
175
200
125
75
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
F
(A)
125 °C
25 °C
0
50
100
150
200
10
9
8
7
6
5
4
3
2
1
0
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 5.6
Ω
V
GE
= - 15 V
T
J
= 125 °C
Advertising