Vskt320pbf series, Vishay semiconductors, On-state conduction – C&H Technology VSKT320PbF Series User Manual

Page 3: Switching, Blocking

Advertising
background image

VSKT320PbF Series

www.vishay.com

Vishay Semiconductors

Revision: 05-Jul-12

2

Document Number: 94085

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

at case temperature

I

T(AV)

180° conduction, half sine wave

320

A

70

°C

Maximum RMS on-state current

I

T(RMS)

As AC switch

710

A

Maximum peak, one-cycle on-state

non-repetitive, surge current

I

TSM

t = 10 ms

No voltage

reapplied

Sinusoidal

half wave,

initial T

J

=

T

J

maximum

9000

t = 8.3 ms

9420

t = 10 ms

100 % V

RRM

reapplied

7570

t = 8.3 ms

7920

Maximum I

2

t for fusing

I

2

t

t = 10 ms

No voltage

reapplied

405

kA

2

s

t = 8.3 ms

370

t = 10 ms

100 % V

RRM

reapplied

287

t = 8.3 ms

262

Maximum I

2

t for fusing

I

2

t

t = 0.1 ms to 10 ms, no voltage reapplied

4050

kA

2

s

Low level value or threshold voltage

V

T(TO)1

(16.7 % x

 x I

T(AV)

< I <

 x I

T(AV)

),

T

J

= T

J

maximum

0.80

V

High level value of threshold voltage

V

T(TO)2

(I >

 x I

T(AV)

< I <

 x I

T(AV)

), T

J

= T

J

maximum

1.03

Low level value on-state slope resistance

r

t1

(16.7 % x

 x I

T(AV)

< I <

 x I

T(AV)

),

T

J

= T

J

maximum

0.75

m

High level value on-state slope
resistance

r

t2

(I

>

 x I

T(AV)

< I <

 x I

T(AV)

), T

J

= T

J

maximum

0.53

Maximum peak on-state or

forward voltage drop

V

TM

, V

FM

I

TM

= 750 A, T

J

= T

J

maximum, 180° conduction,

average power = V

T(TO)

x I

T(AV)

+ r

f

x (I

T(RMS)

)

2

1.37

V

I

TM

= 750 A, T

J

= 25 °C, 180° conduction,

average power = V

T(TO)

x I

T(AV)

+ r

t

x (I

T(RMS)

)

2

1.40

Maximum holding current

I

H

Anode supply = 12 V, initial I

T

= 30 A, T

J

= 25 °C

500

mA

Maximum latching current

I

L

Anode supply = 12 V, resistive load = 1

,

gate pulse: 10 V, 100 μs, T

J

= 25 °C

1000

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical delay time

t

d

T

J

= 25 °C, gate current = 1 A dI

g

/dt = 1 A/μs

V

d

= 0.67 % V

DRM

1.0

μs

Typical rise time

t

r

2.0

Typical turn-off time range

t

q

I

TM

= 300 A; dI/dt = 15 A/μs; T

J

= T

J

maximum;

V

R

= 50 V; dV/dt = 20 V/μs; gate 0 V, 100

200 to 350

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and

off-state leakage current

I

RRM,

I

DRM

T

J

= T

J

maximum

50

mA

RMS insulation voltage

V

INS

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s

3600

V

Critical rate of rise of off-state voltage

dV/dt

T

J

= T

J

maximum, exponential to 67 % rated V

DRM

1000

V/μs

Advertising