Vishay semiconductors – C&H Technology VS-GB75TP120U User Manual
Page 5
VS-GB75TP120U
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Vishay Semiconductors
Revision: 17-May-13
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Document Number: 94822
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Current
Fig. 7 - Typical Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs.Gate Resistance R
g
Fig. 9 - Diode Typical Forward Characteristics
15
12
9
6
3
0
Q
g
(nC)
V
G
E
(V)
0
250
750
500
1000
V
CC
= 600 V
T
J
=
25 °C
I
C
= 75 A
0
5
10
15
20
25
30
35
10
1
10
0
10
-1
V
CE
(V)
C (nF)
C
ies
C
oes
C
res
0
25
50
75
100
125
150
175
10
3
10
2
10
1
I
C
(A)
t (ns)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
=
125 °C
V
CC
= 600 V
R
g
= 15
Ω
R
g
(
Ω)
0
20
40
60
80
100
120
10
4
10
-1
t (ns)
10
3
10
2
V
GE
= ± 15 V
T
J
=
125 °C
V
CC
= 600 V
I
C
= 75 A
t
d(off)
t
d(on)
t
f
t
r
150
125
100
75
50
25
0
0
0.5
1.5
1
2
2.5
3
V
F
(V)
I
F
(A)
25 °C
125 °C