C&H Technology GA200HS60S1PbF - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94362
2 Revision: 29-Apr-08
GA200HS60S1PbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Q
g I
C
= 200 A
V
CC
= 400 V
V
GE
= 15 V
- 1600 1700
nC Gate to emitter charge Q
ge
- 260 340
Gate to collector charge Q
gc
- 580 670
Turn-on switching loss E
on I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
G
= 10
Ω
Freewheeling diode: 30EPH06
- 30 -
mJ Turn-off switching loss E
off
- 50 -
Total switching loss E
ts
- 80 -
Turn-on switching loss E
on I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V
R
G
= 10
Ω
Freewheeling diode: 30EPH06, T
J
= 125 °C
- 34 -
mJ Turn-off switching loss E
off
- 104 -
Total switching loss E
ts
- 138 151
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 32 500 -
pF Output capacitance C
oes
- 2080 -
Reverse transfer capacitance C
res
- 380 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case per leg R
thJC
- - 0.15
°C/W
Case to sink R
thCS
- 0.1 -
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight - 185 - g
10
100
1000
0.6 0.8 1.0 1.2 1.4 1.6
V
CE
- Collector to Emitter Voltage (V)
I C
- Collector to Emitter Current (A)
T
J
= 25 °C
V
GE
= 15 V
500 µs pulse width
T
J
= 125 °C
1000
100
10
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GE
- Gate to Emitter Voltage (V)
I C
- Collector to Emitter Current (A)
T
J
= 125 °C
T
J
= 25 °C