Vishay semiconductors – C&H Technology VS-HFA220FA120 User Manual

Page 4

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VS-HFA220FA120

www.vishay.com

Vishay Semiconductors

Revision: 22-Mar-12

3

Document Number: 93636

For technical questions within your region:

[email protected]

,

[email protected]

,

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 3 - Maximum Thermal Impedance Z

thJC

Characteristics (Per Leg)

Fig. 4 - Maximum Allowable Case Temperature vs. Average

Forward Current (Per Leg)

Fig. 5 - Forward Power Losses Characteristics (Per Leg)

Fig. 6 - Typical Reverse Recovery Time vs. dI

F

/dt

Fig. 7 - Typical Stored Charge vs. dI

F

/dt

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

Z

th

JC

-

T

he

rma

l Impe

d

an

ce

J

u

nc

ti

on

to Ca

se

C/W

)

t

1

- Rectangular Pulse Duration (s)

0.75
0.50
0.33
0.25
0.20

P

DM

t

2

t

1

Notes:
1. Duty factor D = t

1

/t

2

2. Peak T

J

= P

DM

x Z

thJC

+ T

C

DC

0

25

50

75

100

125

150

175

0

20

40

60

80

100 120 140 160 180

A

llo

w

a

b

le

C

a

s

e

T

e

m

p

er

at

u

re (

°

C)

I

F(AV)

- Average Forward Current (A)

Square wave (d = 0.5)
Rated V

R

applied

DC

0

100

200

300

400

500

600

700

800

0

40

80

120

160

200

Ave

ra

g

e

Pow

e

r Loss

(W)

I

F(AV)

- Average Forward Current (A)

RMS Limit

DC

D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50

0

0

1

0

0

1

0

50

100

150

200

250

300

V

R

= 200 V

I

F

= 50 A, T

J

= 25 °C

I

F

= 50 A, T

J

= 125 °C

dI

F

/dt (A/μs)

t

rr

(ns)

dI

F

/dt (A/μs)

Q

rr

(ns)

0

500

1000

1500

2000

2500

3000

3500

4000

V

R

= 200 V

I

F

= 50 A, T

J

= 25 °C

I

F

= 50 A, T

J

= 125 °C

100

1000

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