Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB100LP120N User Manual
Page 4
VS-GB100LP120N
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Vishay Semiconductors
Revision: 04-Mar-13
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Document Number: 94808
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT (per 1/2 module)
R
thJC
-
-
0.19
K/W
Diode (per 1/2 module)
-
-
0.28
Case to sink
R
thCS
Conductive grease applied
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight of module
150
g
0
1
2
3
4
5
0
50
100
150
200
250
300
V
GE
= 15 V
25 °C
125 °C
V
CE
(V)
I
C
(A)
0
40
80
120
160
200
0
1
3
2
4
5
7
9
6
8
12
10 11
13
V
GE
(V)
I
C
(A)
V
CE
= 20 V
25 °C
125 °C
0
20
40
60
80
100
0
50
100
150
200
300
250
I
C
(A)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 3
Ω
V
CC
= 600 V
E
on
E
off
0
5
10
15
20
25
0
10
20
30
R
g
(
Ω)
E
on
, E
of
f
(mJ)
E
on
E
off
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 600 V