Vishay semiconductors – C&H Technology VS-GB300NH120N User Manual
Page 5
VS-GB300NH120N
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-13
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Document Number: 94783
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
F
0
100
200
300
400
500
600
700
0
300
600
900
1200
1500
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7
Ω
I
C
, Module
V
CE
(V)
I
C
(A)
t (s)
Z
thJC
(K/W)
IGBT
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
0
100
200
300
400
500
600
0
0.5
1
1.5
2
3
2.5
V
F
(V)
I
F
(A)
125 °C
25 °C
E (mJ)
0
5
10
15
20
25
30
35
40
0
100
200
300
400
500
600
I
F
(A)
E
rec
V
GE
= - 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
= 4.7
Ω