C&H Technology VS-GA75TP60S - Manual (Page 5)

VS-GA75TP60S
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Vishay Semiconductors
Revision: 04-Mar-13 4 Document Number: 94810
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
0 200 600 400 800
0
80
40
20
60
100
120
140
160
I C
(A)
V
CE
(V)
Module
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 18 Ω
Z thJC
(K/W)
t (s)
IGBT
10
-1
10 0
10
-2
10 0 10 1 10 -1 10 -2
10 -3
0
0
25
50
75
100
125
150
0.4 1.2 0.8 1.6 2
25 °C
125 °C
V
F
(V)
I C
(A)
I
F
(A)
E (mJ)
0
0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
E
rec
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 18 Ω
V
CC
= 300 V