Vishay semiconductors – C&H Technology VS-GA100TP60S User Manual
Page 5
VS-GA100TP60S
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Vishay Semiconductors
Revision: 28-Nov-12
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Document Number: 94811
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage
Fig. 7 - Typical Switching Time vs. I
C
Fig. 8 - Typical Switching Time vs. Gate Resistance
Fig. 9 - Typical Forward Characteristics (Diode)
V
G
E
(V)
Q
g
(μC)
0
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0
8
4
2
6
10
12
14
16
V
CC
= 400 V
T
J
= 25 °C
I
C
= 100 A
V
CE
(V)
C (nF)
10
1
10
2
10
0
10
-1
0
5
10
15
20
25
30
35
C
oes
C
res
C
ies
10
1
10
2
10
3
0
50
100
150
200
250
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 2.2
Ω
V
CC
= 300 V
I
C
(A)
t (ns)
10
1
10
2
10
3
0
10
20
30
40
50
60
70
t
d(off)
t
d(on)
t
f
t
r
t (ns)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 300 V
R
g
(
Ω)
200
175
150
125
100
75
50
25
0
1.5
2
0.5
0
1
25 °C
125 °C
V
F
(V)
I
F
(A)