C&H Technology ND42__21 - Manual (Page 4)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 POW-R-BLOK
TM
www.pwrx.com Dual SCR/Diode Isolated Module
210 Amperes / Up to 2000 Volts
Revision Date: 05/17/2010
ND42__21
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Max. Units
Repetitive Peak Forward Leakage Current I
DRM
Up to 2000V, T
J
=130°C 50 mA
Repetitive Peak Reverse Leakage Current I
RRM
Up to 2000V, T
J
=130°C 50 mA
Peak On-State Voltage V
FM
I
TM
=625A 1.40 V
Threshold Voltage, Low-level
Slope Resistance, Low-level V
(TO)1
r
T1
T
J
= 130°C, I = 15%I
T(AV)
to πI
T(AV)
0.813
0.810 V
mΩ
Threshold Voltage, High-level
Slope Resistance, High-level V
(TO)2
r
T2
T
J
= 130°C, I = πI
T(AV)
to I
TSM
0.947
0.641 V
mΩ
V
TM
Coefficients, Full Range T
J
= 130°C, I = 15%I
T(AV)
to I
TSM
V
TM
= A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D = 0.7324
9.80 E-3
5.83 E-4
6.02 E-3
Minimum dV/dt dV/dt Exponential to 2/3 V
DRM
T
j
=130°C, Gate Open
500 V/µs
Turn-On Time (Typical) t
on
I
TM
= 100A, V
D
= 100V 7 (Typical) µs
Turn-Off Time (Typical) t
off
T
J
= 130°C, I
T
= 250A
Re-Applied dV/dt = 20V/µs
Linear to 0.8 V
DRM
150 (Typical) µs
Gate Trigger Current I
GT
T
j
=25°C, V
D
=12V 150 mA
Gate Trigger Voltage V
GT
T
j
=25°C, V
D
=12V 3.0 Volts
Non-Triggering Gate Voltage V
GDM
T
j
=130°C, V
D
= ½ V
DRM
0.15 Volts
Thermal Characteristics
Characteristics Symbol Max. Units
Thermal Resistance, Junction to Case
R
ΘJ-C
Per Module, both conducting
Per Junction both conducting
0.07
0.14 °C/W
°C/W
Thermal Impedance Coefficients
Z
Θ J-C
Z
Θ J-C
= K
1
(1-exp(-t/ τ
1
))
+ K 2 (1-exp(-t/ τ
2 ))
+ K 3 (1-exp(-t/ τ
3 ))
+ K
4
(1-exp(-t/ τ
4
))
K
1
= 5.27E-3
K 2 = 1.17E-2
K 3 = 5.26E-2
K
4
= 6.97E-2
τ
1
= 1.69E-4
τ
2 = 2.07E-2
τ
3 = 2.37E-1
τ
4
= 2.46
Thermal Resistance, Case to Sink Lubricated R
ΘC-S
Per Module 0.03 °C/W