Vishay semiconductors – C&H Technology VS-GB150LH120N User Manual
Page 5
VS-GB150LH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
4
Document Number: 94757
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs. Gate Resistance R
g
Fig. 9 - Typical Forward Characteristics, Diode
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1.2
1
1.4
V
CC
= 600 V
T
J
=
25 °C
I
C
= 150 A
V
G
E
(V)
Q
G
(μC)
C (nF)
V
CE
(V)
10
1
10
2
10
0
10
-1
0
5
10
15
20
25
30
35
C
oes
C
res
C
ies
0
100
300
200
10
2
10
3
10
1
t (ns)
I
C
(A)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 6.8
Ω
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
0
20
60
40
10
3
10
2
10
4
10
1
t (ns)
R
g
(
Ω)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 150 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
0
50
100
150
200
250
300
0
1
2
3
4
I
F
(A)
V
F
(V)
25 °C
125 °C