C&H Technology HFA50PA60C User Manual

Hexfred, Vishay high power products

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Document Number: 93096

For technical questions, contact: [email protected]

www.vishay.com

Revision: 29-Jul-08

1

HEXFRED

®

Ultrafast, Soft Recovery Diode, 2 x 25 A

HFA50PA60C

Vishay High Power Products

FEATURES

• Ultrafast recovery
• Ultrasoft recovery
• Very low I

RRM

• Very low Q

rr

• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION

HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED

®

product line features

extremely low values of peak recovery current (I

RRM

) and

does not exhibit any tendency to “snap-off” during the
t

b

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

PRODUCT SUMMARY

V

R

600 V

V

F

at 25 A at 25 °C

1.7 V

I

F(AV)

2 x 25 A

t

rr

(typical)

23 ns

T

J

(maximum)

150 °C

Q

rr

(typical)

112 nC

dI

(rec)M

/dt (typical) at 125 °C

160 A/µs

I

RRM

(typical)

4.5 A

TO-247AC

Base

common

cathode

Common

cathode

2

2

1

3

Anode

1

Anode

2

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

MAX.

UNITS

Cathode to anode voltage

V

R

600

V

Maximum continuous forward current

per leg

I

F

T

C

= 100 °C

25

A

per device

50

Single pulse forward current

I

FSM

225

Maximum repetitive forward current

I

FRM

100

Maximum power dissipation

P

D

T

C

= 25 °C

150

W

T

C

= 100 °C

60

Operating junction and storage temperature range

T

J

, T

Stg

- 55 to + 150

°C

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