C&H Technology CPV362M4UPbF - Manual (Page 4)

Document Number: 94483 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 3
CPV362M4UPbF
IGBT SIP Module
(Fast IGBT)
Vishay High Power Products
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) O
g I
C
= 3.9 A
V
CC
= 400 V
V
GE
= 15 V
- 31 47
nC Gate to emitter charge (turn-on) O
GE
- 5.0 7.5
Gate to collector charge (turn-on) O
gc
- 13 20
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
- 45 -
ns
Rise time t
r
- 22 -
Turn-off delay time t
d(off)
- 100 160
Fall time t
f
- 120 180
Turn-on switching loss E
on
- 0.13 -
mJ Turn-off switching loss E
off
- 0.07 -
Total switching loss E
ts
- 0.20 0.3
Turn-on delay time t
d(on) T
J
= 150 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
- 42 -
ns
Rise time t
r
- 22 -
Turn-off delay time t
d(off)
- 120 -
Fall time t
f
- 250 -
Total switching loss E
ts
- 0.35 - mJ
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
- 530 -
pF Output capacitance C
oes
- 39 -
Reverse transfer capacitance C
res
- 7.4 -
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200 A/µs
- 37 55
ns
T
J
= 125 °C - 55 90
Diode peak reverse recovery current I
rr
T
J
= 25 °C
See fig. 15
- 3.5 5.0
A
T
J
= 125 °C - 4.5 8.0
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 65 138
nC
T
J
= 125 °C - 124 360
Diode peak rate of fall of
recovery during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
- 240 -
A/µs
T
J
= 125 °C - 210 -