Vishay semiconductor italy, Thermal-mechanical specifications, Diode characteristics @ t – C&H Technology GB100DA60UP User Manual
Page 4: 25°c (unless otherwise specified)
GB100DA60UP
Vishay Semiconductor Italy
3
Revision 28-Mar-08
THERMAL-MECHANICAL SPECIFICATIONS
V
FM
Diode Forward Voltage Drop
1.6
V
I
C
= 100A, V
GE
= 0V
1.7
I
C
= 100A, V
GE
= 0V, T
J
= 125°C
trr
Diode Reverse Recovery Time
96
ns
V
CC
= 200V, I
C
= 50A
Irr
Diode Peak Reverse Current
10
A
dI/dt = 200A/
μ
sec
Qrr
Diode Recovery Charge
480
nC
trr
Diode Reverse Recovery Time
142
ns
V
CC
= 200V, I
C
= 50A
Irr
Diode Peak Reverse Current
16
A
dI/dt = 200A/
μ
sec
Qrr
Diode Recovery Charge
1136
nC
T
J
= 125°C
T
J
Operating Junction
- 40
150
°C
T
STG
Storage Temperature Range
- 40
150
R
thCS
Case-to-Sink, Flat, Greased Surface
0.05
R
thJC
Junction-to-case
Diode
0.4
°C/W
Igbt
0.28
T
Mounting torque, 6-32 or M3 Screw
1.3
Nm
Wt
Weight
30
g
PARAMETERS
MIN
TYP
MAX
UNITS
PARAMETERS
MIN
TYP
MAX UNITS TEST CONDITIONS
DIODE CHARACTERISTICS @ T
J
= 25°C
(unless otherwise specified)