C&H Technology VS-GT400TH120N - Manual (Page 5)

VS-GT400TH120N
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Vishay Semiconductors
Revision: 17-Sep-12 4 Document Number: 94748
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I C
(A)
V
CE
(V)
0 300 900 600 1200 1500
0
800
1000
400
200
600
I
C
, module
R
g
= 1.8 Ω
V
GE
= ± 15 V
T
J
= 125 °C
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
IGBT
I F
(A)
V
F
(V)
0 2.0 2.5 1.5 0.5 1.0
0
800
400
300
200
100
700
600
500
125 °C
25 °C
E (mJ)
I
F
(A)
0 200 400 600 800
0
40
20
10
30
50
60
E
rec
V
CC
= 600 V
R
g
= 1.8 Ω
V
GE
= - 15 V
T
J
= 125 °C