C&H Technology VS-GB100TP120U - Manual (Page 5)

VS-GB100TP120U
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Vishay Semiconductors
Revision: 17-May-13 4 Document Number: 94823
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
250
200
150
100
50
0
V
CE
(V)
I C
(A)
0 350 1050 700 1400
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
Module
Chip
t (s)
Z
thJC
(K/W)
10 0
10 -1
10 -2
10 -3
10 -1 10 0 10 -2 10 -3 10 -4
IGBT
0 0.5 1.5 1 2 3 2.5
V
F
(V)
I F
(A)
200
180
160
140
120
100
80
60
40
20
0
125 °C
25 °C
0 50 150 100 200
I
F
(V)
E (mJ)
10
12
8
6
4
2
0
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
rec