C&H Technology CPV363M4UPbF - Manual (Page 8)

Document Number: 94486 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 7
CPV363M4UPbF
IGBT SIP Module
(Ultrafast IGBT)
Vishay High Power Products
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
Fig. 17 - Typical dI
(rec)M
/dt vs dI
F
/dt
0
40
80
120
160
0 0 0 1 0 0 1
f di /dt - (A/µs)
t
- (ns) rr
I = 24A
I = 12A
I = 6.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0 0 0 1 0 0 1
f di /dt - (A/µs)
I
-
(A)
IR
R
M
I = 6.0A
I = 12A
I = 24A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
0 0 0 1 0 0 1
f di /dt - (A/µs)
RR
Q
- (nC
)
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
F
10
100
1000
10000
0 0 0 1 0 0 1
f di /dt - (A/µs)
d
i(rec)M
/dt
-
(A/µ
s)
I = 12A
I = 24A
I = 6.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J