Vishay semiconductors – C&H Technology GT100DA60U User Manual
Page 6
GT100DA60U
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-12
5
Document Number: 93185
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Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 360 V, V
GE
= 15 V
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
I
C
= 100 A, V
GE
= 15 V
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
Energy (mJ)
R
g
(
Ω)
0
10
20
40
30
50
0
93185_11
6
3
5
4
2
1
E
on
E
off
S
witching Time (ns)
R
g
(
Ω)
0
10
30
40
20
50
10
93185_12
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
93185_13
1000
30
190
90
130
170
70
50
110
150
T
J
= 125 °C
T
J
= 25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
93185_14
1000
0
30
20
25
10
15
5
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
1000
0
93185_15
1400
400
600
1000
800
1200
200
T
J
= 125 °C
T
J
= 25 °C