Vishay semiconductors – C&H Technology VS-GT175DA120U User Manual
Page 9
VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
8
Document Number: 93990
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
D
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
1
-
Insulated Gate Bipolar Transistor (IGBT)
-
Vishay Semiconductors product
2
-
Trench IGBT technology
3
-
Current rating (175 = 175 A)
4
-
Circuit configuration (D = Single switch with antiparallel diode)
5
-
Package indicator (A = SOT-227)
6
-
Voltage rating (120 = 1200 V)
8
7
-
Speed/type (U = Ultrafast)
Device code
5
1
3
2
4
6
7
8
G
VS-
T
175
D
A
120
U
3 (C)
2 (G)
1, 4 (E)
1
4
3
2
Lead Assignment