Electrical characteristics @ t, 25°c (unless otherwise specified), Switching characteristics @ t – C&H Technology GA100TS60SF User Manual

Page 3: Thermal- mechanical specifications

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GA100TS60SF

Bulletin I27201 rev. A 01/06

T

J

Operating Junction Temperature Range

- 40

150

°C

T

STG

Storage Temperature Range

- 40

125

R

thJC

Junction-to-Case

per Switch

0.16

°C/ W

Per Diode

0.48

R

thCS

Case-to-Sink

Per Module

0.1

T

Mounting torque

Case to heatsink

4

Nm

Case to terminal 1, 2, 3

3

Weight

185

g

V

BRCES

Collector-to-Emitter Breakdown Voltage

600

V

V

GE

= 0V, I

C

= 1mA

V

CE(on)

Collector-to-Emitter Voltage

1.11

1.28

V

GE

= 15V, I

C

= 100A

1.39

I

C

= 200A

1.08

1.22

V

GE

= 15V, I

C

= 100A, T

J

= 125°C

V

GE(th)

Gate Threshold Voltage

3

6

I

C

= 0.25mA

I

CES

Collector-to-Emiter Leakage

1

mA

V

GE

= 0V, V

CE

= 600V

Current

10

V

GE

= 0V, V

CE

= 600V, T

J

= 125°C

V

F M

Diode Forward Voltage drop

1.44

1.96

V

I

C

= 100A, V

GE

= 0V

1.25

1.54

I

C

= 100A, V

GE

= 0V, T

J

= 125°C

I

GES

Gate-to-Emitter Leakage Current

± 250

nA

V

GE

= ± 20V

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

Q

g

Total Gate Charge

640

700

nC

I

C

= 100A

Q

ge

Gate-Emitter Charge

108

120

V

CC

= 400V

Q

gc

Gate-Collector Charge

230

300

V

GE

= 15V

t

r

Rise Time

0.45

µs

I

C

= 100A, V

CC

= 480V, V

GE

= 15V

t

f

Fall Time

1.0

R

g

= 15Ω

E

on

Turn-On Switching Energy

4

6

mJ

E

off

Turn-Off Switching Energy

23

29

E

ts

Total Switching Energy

27

35

E

on

Turn-On Switching Energy

6

12

mJ

I

C

= 100A, V

CC

= 480V, V

GE

= 15V

E

off

Turn-Off Switching Energy

35

40

R

g

= 15Ω

, T

J

= 125°C

E

ts

Total Switching Energy

41

52

C

ies

Input Capacitance

16250

pF

V

GE

= 0V

C

oes

Output Capacitance

1040

V

CC

= 30V

C

res

Reverse Transfer Capacitance

190

f = 1.0 MHz

t

rr

Diode Reverse Recovery Time

91

155

ns

I

F

= 50A, d

IF

/dt = 200A/µs

I

rr

Diode Peak Reverse Current

10.6

15

A

V

RR

= 200V

Q

rr

Diode Recovery Charge

500

900

nC

t

rr

Diode Reverse Recovery Time

180

344

ns

I

F

= 50A, d

IF

/dt = 200A/µs

I

rr

Diode Peak Reverse Current

17

20.5

A

V

RR

= 200V

Q

rr

Diode Recovery Charge

1633

2315

nC

T

J

= 125°C

Switching Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

Thermal- Mechanical Specifications

Parameters

Min

Typ

Max

Units

Document Number: 93619

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