Vishay semiconductors, Preliminary – C&H Technology VS-GT450TX120U User Manual
Page 2
Preliminary
VS-GT450TX120U
www.vishay.com
Vishay Semiconductors
Revision: 23-Jul-13
1
Document Number: 93615
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
X-MAP Power Module
Half-Bridge - Trench IGBT, 450 A
FEATURES AND BENEFITS
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED antiparallel diodes with soft reverse recovery
• T
J
maximum = 175 °C
• Fully isolated package
• Industry standard outline
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
REMARKS
• Product reliability results valid for T
J
= 150 °C
• Recommended operation temperature T
op
= 150 °C
Note
(1)
Maximum I
RMS
current admitted 600 A to do not exceed the maximum temperature of terminals.
PRODUCT SUMMARY
IGBT
V
CES
1200 V
V
CE(on)
(typical) at 450 A, 25 °C
2.49 V
I
D(DC)
at 87 °C
450 A
HEXFRED
®
t
rr
(typical)
370 ns
I
F(DC)
at 25 °C
412 A
Type
Modules - IGBT
Package
X-MAP
X-MAP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
IGBT
Collector to emitter voltage
V
CES
1200
V
Continuous collector current, V
GE
at 15 V
I
C
T
C
= 25 °C
(1)
628
A
T
C
= 80 °C
473
Pulsed collector current
I
CM
n/a
Clamped inductive load current
I
LM
n/a
Power dissipation
P
D
T
C
= 25 °C
2500
W
T
C
= 80 °C
1583
Gate to source voltage
V
GE
± 30
V
HEXFRED
Peak repetitive reverse voltage
V
RRM
1200
V
Continuous forward current
I
F
T
C
= 25 °C
412
A
T
C
= 80 °C
308
Peak repetitive forward current
I
FSM
n/a
Power dissipation
P
D
T
C
= 25 °C
1250
W
T
C
= 80 °C
792
MODULE
Operating junction temperature range
T
J
- 55 to + 175
°C
Storage temperature range
T
Stg
- 40 to + 175
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 s
3500
V