Datasheet, Vishay high power products, Rohs – C&H Technology GB50YF120N User Manual
Page 2
Document Number: 93653
For technical questions, contact: [email protected]
www.vishay.com
Revision: 29-May-08
1
IGBT Fourpack Module, 50 A
GB50YF120N
Vishay High Power Products
FEATURES
• Square RBSOA
• HEXFRED
®
low Q
rr
, low switching energy
• Positive V
CE(on)
temperature coefficient
• Copper baseplate
• Low stray inductance design
• Operating frequencies 8 to 60 kHz
• Designed and qualified for industrial market
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 66 °C
50 A
V
CE(on)
(typical)
3.49 V
ECONO2 4PACK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
66
A
T
C
= 80 °C
44
Pulsed collector current
I
CM
See fig. C.T.5
150
Clamped inductive load current
I
LM
150
Diode continuous forward current
I
F
T
C
= 25 °C
40
T
C
= 80 °C
25
Diode maximum forward current
I
FM
150
Gate to emitter voltage
V
GE
± 20
V
Maximum power dissipation (IGBT)
P
D
T
C
= 25 °C
330
W
T
C
= 80 °C
180
Maximum operating junction temperature
T
J
150
°C
Storage temperature range
T
Stg
- 40 to + 125
Isolation voltage
V
ISOL
AC 2500 (MIN)
V