Vishay semiconductor italy – C&H Technology UFL200FA60P User Manual
Page 4

UFL200FA60P
Vishay Semiconductor Italy
www.vishay.com
3
Document Number: I27322
Revision 30-Oct-07
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
F
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (per diode)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
Reverse Current - I
R
(μ
A)
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
100
200
300
400
500
600
0.001
0.01
0.1
1
10
100
1000
25°C
175°C
125C
10
100
1000
10000
10
100
1000
T = 25˚C
J
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc