C&H Technology VS-GT50TP120N - Manual (Page 5)

VS-GT50TP120N
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Vishay Semiconductors
Revision: 17-May-13 4 Document Number: 94824
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I C
(A)
0
0 350 700 1050 1400
20
40
60
80
100
120
Module
V
CE
(V)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 15 Ω
Chip
t (s)
Z
thJC
(K/W)
10 0
10 -1
10 -2
10 -3
10 -0 10 1 10 -1 10 -2 10 -3
IGBT
30
20
10
0
40
50
60
70
80
90
100
0 1 2 3
V
F
(V)
I F
(A)
25 °C
125 °C
I
F
(A)
E (mJ)
0
0.5
1
1.5
2
2.5
3.5
3
0 25 50 75 100
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 15 Ω
V
CC
= 600 V
E
rec