Vishay GA200SA60UP User Manual
Vishay high power products, Rohs
Document Number: 94364
For technical questions, contact: [email protected]
www.vishay.com
Revision: 29-Apr-08
1
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
GA200SA60UP
Vishay High Power Products
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz
in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 V
AC/RMS
)
• Very low internal inductance (
≤ 5 nH typical)
• Industry standard outline
• UL pending
• Completely lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical)
1.60 V
V
GE
15 V
I
C
100 A
SOT-227
C
G
E
n-channel
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
200
A
T
C
= 100 °C
100
Pulsed collector current
I
CM
400
Clamped inductive load current
I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 2.0
Ω,
See fig. 13a
400
Gate to emitter voltage
V
GE
± 20
V
Reverse voltage avalanche energy
E
ARV
Repetitive rating; pulse width limited
by maximum junction temperature
160
mJ
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
Maximum power dissipation
P
D
T
C
= 25 °C
500
W
T
C
= 100 °C
200
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150
°C
Mounting torque
6-32 or M3 screw
1.3 (12)
N
⋅ m
(lbf
⋅ in)
THERMAL RESISTANCE
PARAMETER
SYMBOL
TYP.
MAX. UNITS
Junction to case
R
thJC
-
0.25
°C/W
Case to sink, flat, greased surface
R
thCS
0.05
-
Weight of module
30
-
g