Vishay semiconductors – C&H Technology VS-GB600AH120N User Manual
Page 5
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
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Document Number: 94791
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage
Fig. 7 - Typical Switching Times
Fig. 8 - Typical Switching Times vs. Gate Resistance R
g
Fig. 9 - Typical forward Characteristics (Diode)
- 10
0
10
20
0
1
3
4
5
6
2
V
G
E
(V)
Q
g
(μC)
T
J
=
25 °C
I
C
= 600 A
V
CC
= 600 V
C (nF)
V
CE
(V)
10
1
10
2
10
0
10
-1
0
10
15
5
20
25
30
35
C
res
C
ies
C
oes
0
200
600
800
1000
1200
400
t (ns)
10
2
10
3
10
1
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 3
Ω
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
C
(A)
t (ns)
R
g
(
Ω)
10
3
10
4
10
2
10
1
0
5
10
15
20
25
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 600 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
I
F
(A)
V
F
(V)
0
1
2
3
800
1000
1200
600
400
200
0
25 °C
125 °C