C&H Technology 50MT060WHTAPbF - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94468
4 Revision: 06-May-08
50MT060WHTAPbF
Vishay High Power Products "Half-Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Reverse Recovery Current vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
1.0
1.5
2.0
2.5
3.0
V
CE
- Typical Collector to Emitter
Voltage (V)
T
J
- Junction Temperature (°C)
40 60 80 100 120 140 160 20
I
C
= 100 A
I
C
= 50 A
I
C
= 20 A
0
4
8
12
16
20
V
GE
- Gate to Emitter Voltage (V)
O
G
- Typical Gate Charge (nC)
100 200 300 400 0
V
cc
= 400 V
I
c
= 52 A
1
100
10
I F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.8 1.2 1.6 2.0 2.4 0.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
120
140
160
80
60
t rr
(ns)
dI
F
/dt - (A/µs)
1000 100
V
R
= 200 V
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C
1
100
10
I RRM
(A)
dI
F
/dt - (A/µs)
1000 100
V
R
= 200 V
I
F
= 50 A, T
J
= 125 ˚C
I
F
= 50 A, T
J
= 25 ˚C
0
500
1000
2000
1500
Q
RR
( nC)
dI
F
/dt - (A/µs)
1000 100
V
R
= 200V
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C