Trench gate design dual igbtmod – C&H Technology CM150DU-24F User Manual
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Trench Gate Design
Dual IGBTMOD™
150 Amperes/1200 Volts
CM150DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14 +0.04/-0.02 29.0 +1.0/-0.5
D
3.66
±
0.01
93.0
±
0.25
E
1.88
±
0.01
48.0
±
0.25
F
0.67
17.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
K
0.55
14.0
Dimensions
Inches
Millimeters
L
0.87
22.0
M
0.33
8.5
N
0.10
2.5
P
0.85
21.5
Q
0.98
25.0
R
0.11
2.8
S
M6
M6
T
0.26Dia . 6.5 Dia.
U
0.02
0.5
V
0.62
15.85
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-24F is a
1200V (V
CES
), 150 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
150
24
K
D
C
A
E
B
S - NUTS (3 TYP)
CM
K
K
L
R
M
J
T (4 TYP.)
P
Q
C2E1
Q
E2
N
C1
F
H
G
H
G1
E1
E2
G2
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
TC MEASURING
POINT
U
V