C&H Technology CM1800HC-34N User Manual

Page 4

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CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts

3

Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

Static Electrical Characteristics,

T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V, T

j

= 25°C

6.0

mA

V

CE

= V

CES

, V

GE

= 0V, T

j

= 125°C

4.5

12.0

mA

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 180mA, V

CE

= 10V

6.0

7.0

8.0

Volts

Gate Leakage Current I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

µA

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 1800A, V

GE

= 15V, T

j

= 25°C

2.15

2.8

Volts

I

C

= 1800A, V

GE

= 15V, T

j

= 125°C

2.4

Volts

Input Capacitance

C

ies

V

CE

= 10V, V

GE

= 0V,

264

nF

Output Capacitance

C

oes

f = 100kHz,

14.4

nF

Reverse Transfer Capacitance

C

res

T

j

= 25°C

4.2

nF

Total Gate Charge

Q

G

V

CC

= 850V, I

C

= 1800A, V

GE

= 15V

10.2

µC

Emitter-Collector Voltage**

V

EC

I

E

= 1800A, V

GE

= 0V, T

j

= 25°C

2.6

3.3

Volts

I

E

= 1800A, V

GE

= 0V, T

j

= 125°C

2.3

Volts

Turn-On Delay Time

t

d(on)

V

CC

= 850V, I

C

= 1800A,

1.0

µs

Turn-On Rise Time

t

r

V

GE1

= -V

GE2

= 15V, R

G(on)

= 0.9Ω,

0.4

µs

Turn-On Switching Energy

E

on

Inductive Load

550

mJ/P

Turn-Off Delay Time

t

d(off)

V

CC

= 850V, I

C

= 1800A,

1.2

µs

Turn-Off Fall Time

t

f

V

GE1

= -V

GE2

= 15V, R

G(off)

= 2.2Ω,

0.3

µs

Turn-Off Switching Energy

E

off

Inductive load

560

mJ/P

Reverse Recovery Time**

I

rr

V

CC

= 850V, I

E

= 1800A,

720

Amperes

Reverse Recovery Time**

t

rr

di

e

/dt = -3700A/µs,

1.0

µs

Reverse Recovery Charge**

Q

rr

T

j

= 125°C,

420

µC

Reverse Recovery Energy**

E

rec

Inductive Load

280

mJ/P

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Thermal Characteristics,

T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

R

th(j-c)

Q

Per IGBT

12.5

K/kW

Thermal Resistance, Junction to Case

R

th(j-c)

D

Per FWDi

28.0

K/kW

Contact Thermal Resistance, Case to Fin

R

th(c-f)

Per Module, Thermal Grease Applied

11.0

K/kW

Mechanical Characteristics,

T

j

= 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Comparative Tracking Index

CTI

600

Clearance

19.5

mm

Creepage Distance

32.0

mm

Internal Inductance

L

C-E(int)

16

nH

Internal Lead Resistance

R

C-E(int)

0.14

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