Datasheet, Full-bridge" igbt mtp, Ultrafast npt igbt – C&H Technology 20MT120UF User Manual
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20MT120UF
V
CES
= 1200V
I
C
= 40A
T
C
= 25°C
•
UltraFast Non Punch Through (NPT)
Technology
• Positive V
CE(ON)
Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode V
F
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
Continuos Collector Current
@ T
C
= 25°C
40
A
@ T
C
= 106°C
20
I
CM
Pulsed Collector Current
100
I
LM
Clamped Inductive Load Current
100
I
F
Diode Continuous Forward Current
@ T
C
= 106°C
25
I
FM
Diode Maximum Forward Current
100
V
GE
Gate-to-Emitter Voltage
± 20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation (only IGBT)
@ T
C
= 25°C
240
W
@ T
C
= 100°C
96
Parameters
Max
Units
UltraFast NPT IGBT
•
Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Benefits
M
MTP
5/
I27124 rev. D 02/03
Document Number: 93588
www.vishay.com
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